Technical Details

• Part Status Active
• FET Type N-Channel, Depletion Mode
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 500 V
• Current - Continuous Drain (Id) @ 25°C 13mA (Tj)
• Drive Voltage (Max Rds On, Min Rds On) 0V
• Rds On (Max) @ Id, Vgs 1000Ohm @ 500µA, 0V
• Vgs(th) (Max) @ Id -
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 10 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 360mW (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SOT-23 (TO-236AB)
• Package / Case TO-236-3, SC-59, SOT-23-3
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095