Technical Details
-
Part Status
Obsolete
-
FET Type
N-Channel
-
Drain to Source Voltage (Vdss)
30 V
-
Current - Drain (Idss) @ Vds (Vgs=0)
500 µA @ 10 V
-
Current Drain (Id) - Max
20 mA
-
Voltage - Cutoff (VGS off) @ Id
100 mV @ 10 µA
-
Input Capacitance (Ciss) (Max) @ Vds
14pF @ 10V
-
Power - Max
150 mW
-
Operating Temperature
150°C (TJ)
-
Mounting Type
Surface Mount
-
Package / Case
TO-236-3, SC-59, SOT-23-3
-
Supplier Device Package
Mini3-G1
-
Moisture Sensitivity Level (MSL)
1 (Unlimited)
-
ECCN
EAR99
-
HTSUS
8541.21.0095
Top