Technical Details

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 600 V
• Current - Continuous Drain (Id) @ 25°C 20A (Tc)
• Rds On (Max) @ Id, Vgs 178mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
• FET Feature -
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-3PSG
• Package / Case TO-3P-3, SC-65-3
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.29.0095