Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 50 V
• Current - Continuous Drain (Id) @ 25°C 80A
• Drive Voltage (Max Rds On, Min Rds On) -
• Vgs(th) (Max) @ Id -
• Vgs (Max) -
• FET Feature -
• Power Dissipation (Max) 300W
• Operating Temperature 175°C
• Mounting Type Surface Mount
• Supplier Device Package TO-263
• Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• RoHS Status Not applicable
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• ECCN EAR99
• HTSUS 8541.29.0095