Technical Details

• Part Status Active
• FET Type N-Channel, Depletion Mode
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 600 V
• Current - Continuous Drain (Id) @ 25°C 21mA (Ta)
• Rds On (Max) @ Id, Vgs 500Ohm @ 16mA, 10V
• Vgs(th) (Max) @ Id 2.7V @ 8µA
• Gate Charge (Qg) (Max) @ Vgs 1.4 nC @ 5 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 21 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 500mW (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package PG-SOT23-3-5
• Package / Case TO-236-3, SC-59, SOT-23-3
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095