Technical Details

• Part Status Obsolete
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 80A (Tc)
• Rds On (Max) @ Id, Vgs 4.4mOhm @ 80A, 10V
• Vgs(th) (Max) @ Id 2V @ 253µA
• Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V
• Vgs (Max) +5V, -16V
• Input Capacitance (Ciss) (Max) @ Vds 11300 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 137W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Through Hole
• Supplier Device Package PG-TO220-3-1
• Package / Case TO-220-3
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095