- Product Model A5G21H605W19NR3
- Brand NXP USA Inc.
- RoHS Yes
- Description RF MOSFET LDMOS 30V ACP1230S-4
- Categories ترانزستورات الترددات الراديوية (RF FETs)، ترانزستورات تأثير المجال بأكسيد المعدن (MOSFETs)
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PDF
- In Stock
Technical Details
- Part Status Active
- Technology GaN
- Configuration -
- Frequency 2.11GHz ~ 2.2GHz
- Gain 15.1dB
- Voltage - Test 48 V
- Current Rating (Amps) -
- Noise Figure -
- Current - Test 300 mA
- Power - Output 85W
- Voltage - Rated 125 V
- Grade -
- Qualification -
- Mounting Type Surface Mount
- Package / Case OM-780-4S4S
- Supplier Device Package OM-780-4S4S
- RoHS Status ROHS3 Compliant
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- ECCN EAR99
- HTSUS 8541.29.0075


