Technical Details

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 55V, 30V
• Current - Continuous Drain (Id) @ 25°C 40A
• Rds On (Max) @ Id, Vgs 12mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id 2.2V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 6100pF @ 25V
• Power - Max 69W, 96W
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Through Hole
• Package / Case TO-220-5
• Supplier Device Package PG-TO220-5-13