Technical Details

• Part Status Obsolete
• FET Type P-Channel
• Current - Drain (Idss) @ Vds (Vgs=0) 600 µA @ 10 V
• Current Drain (Id) - Max 20 mA
• Voltage - Cutoff (VGS off) @ Id 1.5 V @ 10 µA
• Input Capacitance (Ciss) (Max) @ Vds 10pF @ 10V
• Resistance - RDS(On) 300 Ohms
• Power - Max 300 mW
• Operating Temperature 150°C (TJ)
• Mounting Type Through Hole
• Package / Case 3-SSIP
• Supplier Device Package NS-A1
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.21.0095