Technical Details

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 70A (Ta)
• Rds On (Max) @ Id, Vgs 2mOhm @ 35A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 66 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 65W (Tc)
• Operating Temperature -
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 8-WPAK
• Package / Case 8-PowerWDFN
• RoHS Status Not applicable
• ECCN EAR99
• HTSUS 8541.29.0095