Technical Details

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 200 V
• Current - Continuous Drain (Id) @ 25°C 6A (Tc)
• Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 10 V
• FET Feature -
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-251
• Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.29.0095