Technical Details

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 50 V
• Current - Continuous Drain (Id) @ 25°C 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4V, 5V
• Rds On (Max) @ Id, Vgs 47mOhm @ 16A, 5V
• Vgs(th) (Max) @ Id 2V @ 250mA
• Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
• Vgs (Max) ±10V
• FET Feature -
• Power Dissipation (Max) 60W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package TO-252AA
• Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
• RoHS Status RoHS non-compliant
• ECCN EAR99
• HTSUS 8541.29.0095