Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 5.8A (Ta)
• Rds On (Max) @ Id, Vgs 37mOhm @ 5.8A, 10V
• Vgs(th) (Max) @ Id 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 625pF @ 25V
• Power - Max 2W (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package 8-SOIC