Technical Details

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 1200 V
• Current - Continuous Drain (Id) @ 25°C 187A
• FET Feature -
• Operating Temperature -55°C ~ 175°C
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package PG-TO263-7-12
• Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095