Technical Details

• Part Status Obsolete
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 40 V
• Current - Continuous Drain (Id) @ 25°C 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 7.8mOhm @ 70A, 10V
• Vgs(th) (Max) @ Id 2.2V @ 120µA
• Gate Charge (Qg) (Max) @ Vgs 92 nC @ 10 V
• Vgs (Max) +5V, -16V
• Input Capacitance (Ciss) (Max) @ Vds 5430 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 75W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package PG-TO252-3-313
• Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
• ECCN OBSOLETE
• HTSUS 8541.29.0095