Technical Details

• Part Status Last Time Buy
• FET Type N-Channel
• Technology GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss) 650 V
• Current - Continuous Drain (Id) @ 25°C 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 5V, 5.5V
• Rds On (Max) @ Id, Vgs 98mOhm @ 1.9A, 5.5V
• Vgs(th) (Max) @ Id 2.4V @ 18mA
• Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 6 V
• Vgs (Max) +6V, -10V
• Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 400 V
• FET Feature -
• Power Dissipation (Max) 56W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package DFN8080K
• Package / Case 8-PowerDFN
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• ECCN EAR99
• HTSUS 8541.29.0095