Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 150 V
• Current - Continuous Drain (Id) @ 25°C 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 12V
• Rds On (Max) @ Id, Vgs 88mOhm @ 12A, 12V
• Vgs(th) (Max) @ Id 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 50 nC @ 12 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 2140 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 75W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade Military
• Qualification MIL-STD-750
• Mounting Type Surface Mount
• Supplier Device Package U3 (SMD-0.5)
• Package / Case 3-SMD, No Lead
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095