Technical Details

• Part Status Last Time Buy
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 650 V
• Current - Continuous Drain (Id) @ 25°C 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 6V
• Rds On (Max) @ Id, Vgs 63mOhm @ 9A, 6V
• Vgs(th) (Max) @ Id 2.6V @ 7mA
• Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 6 V
• Vgs (Max) +7V, -10V
• Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 400 V
• FET Feature -
• Power Dissipation (Max) -
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package Die
• Package / Case Die
• ECCN EAR99
• HTSUS 8541.29.0040