Technical Details
-
Part Status
Active
-
FET Type
N-Channel
-
Technology
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss)
60 V
-
Current - Continuous Drain (Id) @ 25°C
310mA (Ta)
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
-
Rds On (Max) @ Id, Vgs
2.4Ohm @ 310mA, 10V
-
Vgs(th) (Max) @ Id
2.3V @ 1mA
-
Vgs (Max)
±20V
-
Input Capacitance (Ciss) (Max) @ Vds
15 pF @ 30 V
-
FET Feature
-
-
Power Dissipation (Max)
200mW (Ta)
-
Operating Temperature
150°C (TJ)
-
Grade
Automotive
-
Qualification
AEC-Q101
-
Mounting Type
Surface Mount
-
Supplier Device Package
SOT-323
-
Package / Case
SC-70, SOT-323
-
Moisture Sensitivity Level (MSL)
1 (Unlimited)
-
REACH Status
REACH info available upon request
-
ECCN
EAR99
-
HTSUS
8541.21.0095
Top