Technical Details

• Part Status Last Time Buy
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 40 V
• Current - Continuous Drain (Id) @ 25°C 45A
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 4.8mOhm @ 22.5A, 10V
• Vgs(th) (Max) @ Id 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 6200 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 30W (Tc)
• Operating Temperature 150°C
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package LFPAK
• Package / Case SC-100, SOT-669
• RoHS Status ROHS3 Compliant