Technical Details

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual) Common Source
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 2A
• Rds On (Max) @ Id, Vgs 100mOhm @ 2A, 4.5V
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 3.9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 175pF @ 10V
• Power - Max 1.25W
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case SOT-23-5 Thin, TSOT-23-5
• Supplier Device Package TSMT5
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095