Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 500 V
• Current - Continuous Drain (Id) @ 25°C 20A (Ta)
• Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
• Vgs (Max) ±30V
• Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 150W (Ta)
• Operating Temperature 150°C
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-3P
• Package / Case TO-3P-3, SC-65-3
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 0000.00.0000