Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 31.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 18.1mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id 1.95V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 9.5 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 15 V
• FET Feature -
• Power Dissipation (Max) 33W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package LFPAK33
• Package / Case SOT-1210, 8-LFPAK33 (5-Lead)
• ECCN EAR99
• HTSUS 8541.29.0095