Technical Details

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 1200 V
• Current - Continuous Drain (Id) @ 25°C 79A
• Drive Voltage (Max Rds On, Min Rds On) 20V
• Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
• Vgs(th) (Max) @ Id 2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 232 nC @ 20 V
• Vgs (Max) +25V, -10V
• Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 1000 V
• FET Feature -
• Power Dissipation (Max) 310W
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Chassis Mount
• Supplier Device Package -
• Package / Case Module
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095