Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 40 V
• Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 15mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id 3V @ 990µA
• Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
• Vgs (Max) +20V, -10V
• Input Capacitance (Ciss) (Max) @ Vds 5000 pF @ 20 V
• FET Feature -
• Power Dissipation (Max) 860mW (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package 9-LGA (3.05x3.05)
• Package / Case 9-ULGA
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095