Technical Details

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 1200 V
• Current - Continuous Drain (Id) @ 25°C 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 18V
• Rds On (Max) @ Id, Vgs 208mOhm @ 5A, 18V
• Vgs(th) (Max) @ Id 5.6V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs 42 nC @ 18 V
• Vgs (Max) +22V, -4V
• Input Capacitance (Ciss) (Max) @ Vds 398 pF @ 800 V
• FET Feature -
• Power Dissipation (Max) -
• Operating Temperature 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package TO-263-7LA
• Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095