Technical Details

• Part Status Active
• FET Type N-Channel
• Technology GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss) 650 V
• Current - Continuous Drain (Id) @ 25°C 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) -
• Rds On (Max) @ Id, Vgs -
• Vgs(th) (Max) @ Id 1.6V @ 4.2mA
• Vgs (Max) -10V
• Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 400 V
• FET Feature -
• Power Dissipation (Max) 134W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package PG-DSO-20-91
• Package / Case 20-BFSOP (0.295", 7.50mm Width)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095