Technical Details

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 25 V
• Current - Continuous Drain (Id) @ 25°C 19A (Ta), 74A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 3.7mOhm @ 19A, 10V
• Vgs(th) (Max) @ Id 2.1V @ 35µA
• Gate Charge (Qg) (Max) @ Vgs 17 nC @ 4.5 V
• Vgs (Max) ±16V
• Input Capacitance (Ciss) (Max) @ Vds 1590 pF @ 13 V
• FET Feature -
• Power Dissipation (Max) 2.1W (Ta), 32W (Tc)
• Operating Temperature -40°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package DIRECTFET™ SQ
• Package / Case DirectFET™ Isometric SQ
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095