Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
• Rds On (Max) @ Id, Vgs 140mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id 1.2V @ 3.7µA
• Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 5 V
• Vgs (Max) ±12V
• Input Capacitance (Ciss) (Max) @ Vds 143 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 500mW (Ta)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package PG-SOT363-6-6
• Package / Case 6-VSSOP, SC-88, SOT-363
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095