Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 45 V
• Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
• Rds On (Max) @ Id, Vgs 190mOhm @ 1.6A, 4.5V
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 2.3 nC @ 4.5 V
• Vgs (Max) ±12V
• Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 800mW
• Operating Temperature 150°C
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package TUMT3
• Package / Case 3-SMD, Flat Leads
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095