Technical Details

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 1200 V
• Current - Continuous Drain (Id) @ 25°C 52A (Tc)
• Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
• Vgs(th) (Max) @ Id 5.7V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs 57 nC @ 15 V
• Vgs (Max) +20V, -7V
• Input Capacitance (Ciss) (Max) @ Vds 2130 pF @ 800 V
• FET Feature -
• Power Dissipation (Max) 228W (Tc)
• Operating Temperature -40°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Through Hole
• Supplier Device Package PG-TO247-3
• Package / Case TO-247-3
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095