Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 90A (Tc)
• Rds On (Max) @ Id, Vgs 4.5mOhm @ 40A, 10V
• Vgs(th) (Max) @ Id 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 29 nC @ 4.5 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 15 V
• FET Feature -
• Power Dissipation (Max) 115W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-220AB
• Package / Case TO-220-3
• Moisture Sensitivity Level (MSL) Vendor Undefined
• REACH Status REACH Unaffected