Technical Details

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 700 V
• Current - Continuous Drain (Id) @ 25°C -
• Drive Voltage (Max Rds On, Min Rds On) -
• Rds On (Max) @ Id, Vgs -
• Vgs(th) (Max) @ Id -
• Vgs (Max) -
• FET Feature -
• Power Dissipation (Max) -
• Operating Temperature -
• Grade -
• Qualification -
• Mounting Type Chassis Mount
• Supplier Device Package SOT-227 (ISOTOP®)
• Package / Case SOT-227-4, miniBLOC
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095