Technical Details

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 4.5A
• Rds On (Max) @ Id, Vgs 57mOhm @ 2.3A, 4.5V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 870pF @ 10V
• Power - Max 2W
• Mounting Type Surface Mount
• Package / Case 8-SOIC (0.173", 4.40mm Width)
• Supplier Device Package 8-PSOP
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• ECCN EAR99
• HTSUS 8541.29.0095