Technical Details

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 150 V
• Current - Continuous Drain (Id) @ 25°C 20A (Ta)
• Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 4V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 52 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds 6720 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 28.5W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-220FL
• Package / Case TO-220-3 Full Pack
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.29.0095