Technical Details

• Part Status Active
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 60 V
• Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
• Rds On (Max) @ Id, Vgs 1.6Ohm @ 300mA, 10V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 15 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) -
• Operating Temperature -
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package 4-DIP, Hexdip, HVMDIP
• Package / Case 4-DIP (0.300", 7.62mm)
• RoHS Status RoHS non-compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• ECCN EAR99
• HTSUS 0000.00.0000