Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 12 V
• Current - Continuous Drain (Id) @ 25°C 7.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
• Rds On (Max) @ Id, Vgs 18mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 24 nC @ 4.5 V
• Vgs (Max) ±8V
• Input Capacitance (Ciss) (Max) @ Vds 920 pF @ 6 V
• FET Feature -
• Power Dissipation (Max) 556mW (Ta), 12.5W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 6-WLCSP (1.48x0.98)
• Package / Case 6-XFBGA, WLCSP
• ECCN EAR99
• HTSUS 8541.29.0095