- Product Model ICPB1020-1-110I
- Brand Microchip Technology
- RoHS Yes
- Description DC-14 GHZ 100W DISCRETE GAN HEMT
- Categories RF полевые транзисторы, МОП-транзисторы
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PDF
- In Stock
Technical Details
- Part Status Active
- Technology GaN HEMT
- Configuration -
- Frequency 14GHz
- Gain 7.4dB
- Voltage - Test 28 V
- Current Rating (Amps) 8A
- Noise Figure -
- Current - Test 1 A
- Power - Output 100W
- Voltage - Rated 28 V
- Mounting Type Surface Mount
- Package / Case Die
- Supplier Device Package Die
- RoHS Status ROHS3 Compliant
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- HTSUS 8541.29.0040


