- Product Model ICPB2002-1-110I
- Brand Microchip Technology
- RoHS Yes
- Description DC-12 GHZ 12W DISCRETE GAN HEMT
- Categories RF полевые транзисторы, МОП-транзисторы
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PDF
- In Stock
Technical Details
- Part Status Active
- Technology GaN HEMT
- Configuration -
- Frequency 12GHz
- Gain 10dB
- Voltage - Test 28 V
- Current Rating (Amps) 1A
- Noise Figure -
- Current - Test 125 mA
- Power - Output 12W
- Voltage - Rated 28 V
- Mounting Type Surface Mount
- Package / Case Die
- Supplier Device Package Die
- REACH Status REACH Unaffected
- ECCN EAR99
- HTSUS 8541.29.0040


