Technical Details

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 600 V
• Current - Continuous Drain (Id) @ 25°C 1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 15V
• Rds On (Max) @ Id, Vgs 3.25Ohm @ 1A, 15V
• Vgs(th) (Max) @ Id 7V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs 7 nC @ 15 V
• Vgs (Max) ±30V
• Input Capacitance (Ciss) (Max) @ Vds 130 pF @ 100 V
• FET Feature -
• Power Dissipation (Max) 6.6W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SOT-223-3
• Package / Case TO-261-3
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095