技术参数

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 1700 V
• Current - Continuous Drain (Id) @ 25°C 10A (Tj)
• Drive Voltage (Max Rds On, Min Rds On) 12V, 15V
• Rds On (Max) @ Id, Vgs 390mOhm @ 2A, 15V
• Vgs(th) (Max) @ Id 5.7V @ 2.6mA
• Gate Charge (Qg) (Max) @ Vgs 11.7 nC @ 12 V
• Vgs (Max) 15V, 12V
• Input Capacitance (Ciss) (Max) @ Vds 506 pF @ 1000 V
• FET Feature -
• Power Dissipation (Max) 111W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package PG-TO247-3-U04
• Package / Case TO-247-3
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095