技术参数

• Part Status Last Time Buy
• FET Type N-Channel
• Technology GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss) 650 V
• Current - Continuous Drain (Id) @ 25°C 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 6V
• Rds On (Max) @ Id, Vgs 32mOhm @ 18A, 6V
• Vgs(th) (Max) @ Id 1.3V @ 14mA
• Gate Charge (Qg) (Max) @ Vgs 12.1 nC @ 6 V
• Vgs (Max) +7V, -10V
• Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 400 V
• FET Feature -
• Power Dissipation (Max) -
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package -
• Package / Case 4-SMD, No Lead
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095