技术参数

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature -
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 1.9A, 1.2A
• Rds On (Max) @ Id, Vgs 105mOhm @ 1A, 4V
• Vgs(th) (Max) @ Id 1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs -
• Input Capacitance (Ciss) (Max) @ Vds 280pF @ 10V
• Power - Max 700mW
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 6-SMD, Flat Leads
• Supplier Device Package WSMini6-F1-B
• RoHS Status RoHS Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.21.0095