技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 33A (Ta), 125A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 2.05mOhm @ 70A, 10V
• Vgs(th) (Max) @ Id 2.35V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 4700 pF @ 15 V
• FET Feature -
• Power Dissipation (Max) 3.8W (Ta), 136W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package PG-TO220-3-U05
• Package / Case TO-220-3
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095