技术参数

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 400 V
• Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Rds On (Max) @ Id, Vgs 45.7mOhm @ 11.1A, 18V
• Vgs(th) (Max) @ Id 5.6V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs 26 nC @ 18 V
• Vgs (Max) +23V, -7V
• Input Capacitance (Ciss) (Max) @ Vds 1170 pF @ 200 V
• FET Feature -
• Power Dissipation (Max) 3.8W (Ta), 167W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package PG-HSOF-8-2
• Package / Case 8-PowerSFN
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095