技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 100 V
• Current - Continuous Drain (Id) @ 25°C 10.3A (Ta), 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 13mOhm @ 10.3A, 10V
• Vgs(th) (Max) @ Id 4.8V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 2210 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
• Operating Temperature -40°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package DIRECTFET™ MN
• Package / Case DirectFET™ Isometric MN
• RoHS Status RoHS non-compliant
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095