技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 4A (Ta)
• Rds On (Max) @ Id, Vgs 50mOhm @ 2A, 4.5V
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 3.3 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds 250 pF @ 10 V
• FET Feature -
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SC-96-3, Thin Mini Mold
• Package / Case SC-96
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• ECCN EAR99
• HTSUS 8541.29.0095