技术参数

• Part Status Active
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 100 V
• Current - Continuous Drain (Id) @ 25°C 2.3A (Ta), 3.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 167mOhm @ 2.2A, 10V
• Vgs(th) (Max) @ Id 2V @ 1.037mA
• Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V
• FET Feature -
• Power Dissipation (Max) 1.8W (Ta), 5W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package PG-SOT223-4-21
• Package / Case TO-261-4, TO-261AA
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095