技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 80 V
• Current - Continuous Drain (Id) @ 25°C 175A (Tj)
• Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
• Rds On (Max) @ Id, Vgs 1.94mOhm @ 88A, 10V
• Vgs(th) (Max) @ Id 3.2V @ 93.4µA
• Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 6061 pF @ 40 V
• FET Feature -
• Power Dissipation (Max) 180W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package PG-LHDSO-10-2
• Package / Case 10-LSOP (0.209", 5.30mm Width) Exposed Pad
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095