技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 150 V
• Current - Continuous Drain (Id) @ 25°C 21A (Ta), 178A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 8V, 15V
• Rds On (Max) @ Id, Vgs 3.6mOhm @ 76A, 15V
• Vgs(th) (Max) @ Id 4V @ 179µA
• Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 6400 pF @ 75 V
• FET Feature -
• Power Dissipation (Max) 3.8W (Ta), 294W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package PG-TO220-3-1
• Package / Case TO-220-3
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.29.0095